論文專著：
在國際科技期刊上發表SCI收錄文章40余篇。
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發表英文論文：
1.Yuanyuan Hu, Qiong Qi, and Chao Jiang* “Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of Pentacene-based thin-film transistors”, Appl. Phys. Lett., 96(2010)XXX (DOI：10.1063/1.3374887).
2.Qiong Qi, Aifang Yu, Peng Jiang and Chao Jiang* “Enhancement of carrier mobility in pentacene thin-film transistor on SiO2 by controlling the initial film growth modes”, Appl. Surf. Sci. 255(2009)5096-5099.
3.Qiong Qi, Yeping Jiang, Aifang Yu, Xiaohui Qiu and Chao Jiang* “Enhancement of Electrical Conductance for Pentacene Thin Film Transistor by Controlling an Initial Layer-by-layer Growth Mode Directly on SiO2 Insulator”, Jpn. J. Appl. Phys. 48(2009)04C164-1.
4.Aifang Yu, Qiong Qi, Peng Jiang and Chao Jiang* “The effects of hydroxyl-free polystyrene buffer layer on electrical performance of pentacene-based thin-film transistors with high-k oxide gate dielectric”, Synthetic metals 159(2009)1467-1470.
5.YU Ai-Fang, QI Qiong, JIANG Peng, JIANG Chao * “Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric”, Chin. Phys. Lett. 26(2009)078501.
6.Qiong Qi, Aifang Yu, Liangmin Wang and Chao Jiang* “Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-effect Transistor”, J. Nanosci. Nanotechnol. 10(2010)XXX.(DOI: 10.1166/jnn.2010.2802)
7.Miao Zhao, Peng Jiang*, Ke Deng, Si-Shen Xie, Guang-Lu Ge and Chao Jiang* “Modulated self-assembly of 4,4_-diphenyltetrathiafulvalene molecules on highly oriented pyrolytic graphite by n-tetradecane solvent”, Nanotechnology 20 (2009)425301.
8.Miao Zhao, Ke Deng, Peng Jiang,*, Si-Shen Xie, Denis Fichou, and Chao Jiang* “Binary-Component Self-Assembled Monolayer Comprising Tetrathiafulvalene and n-Tetradecane Molecules with Periodic Ordered Phase Separation Structures on a Highly Oriented Pyrolytic Graphite Surface”, J. Phys. Chem. C 114(2010)1646.
9. T. Muranaka, C. Jiang, A. Ito, H. Fujikura and H. Hasegawa "Origin of Non-uniformity in MBE Grown Nanometer-sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-assisted Cleaning", Thin Solid Films 380(2000)189.
10.Chao Jiang, Takuya Kawazu, Shigeki Kobayashi and Hiroyuki Sakaki “Molecular Beam Epitaxial Growth of Very Large Lateral Anisotropic GaSb/GaAs Quantum Dots”, J. Cryst. Growth301-302(2007)828-832.
11. Chao Jiang and Hiroyuki Sakaki “Controlling Anisotropy of GaSb(As)/GaAs Quantum Dots by Self-Assembled Molecular Beam Epitaxy”, Physica E32, 17(2006).
12.Chao Jiang and Hiroyuki Sakaki “Sb/As Intermixing in Self-assembled GaSb/GaAs Type II Quantum Dot Systems and Control of Their Photoluminescence Spectra”, Physica E26, 180-184(2005).
13. S. Kobayashi, C. Jiang, T. Kawazu and H. Sakaki “Self-Assembled Growth of GaSb Type II Quantum Ring Structures”, Jpn. J. Appl. Phys. 43(2004)L662-664.
14. Chao Jiang, Tsutomu Muranaka and Hikeki Hasegawa "Molecular Beam Epitaxy Growth Mechanism and Wire Width Control for Formation of Dense Networks of Narrow InGaAs Quantum Wires", Microelectronic Engineering 63 (2002)293.
15. Chao Jiang and Hideki Hasegawa "Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires with Nanometer Wire Widths and Submicron Pitches on Patterned InP Substrates" Jpn. J. Appl. Phys. 41(2002)972.
16. Chao Jiang, Tsutomu Muranaka and Hideki Hasegawa “Structural and Optical Properties of InGaAs Ridge Quantum Wires Arrays with Sub-micron Pitches Grown by Selective MBE on Patterned InP Substrates” Jpn. J. Appl. Phys. 41(2002)2683-2688.
17. A. Ito, T. Muranaka, C. Jiang, and H. Hasegawa "Formation of High-Density Hexagonal Networks of InGaAs Ridge Quantum Wires by Atomic Hydrogen-Assisted Selective Molecular Beam Epitaxy", Appl. Surf. Sci. 190(2002)231.
18. Chao Jiang, Tsutomu Muranaka and Hideki Hasegawa "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate", Jpn. J. Appl. Phys. 40(2001)3003-3008.
19. Tsutomu Muranaka, Chao Jiang, Akira Ito and Hikeki Hasegawa "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE Growth of InGaAs Quantum Structure Arrays", Jpn. J. Appl. Phys. 40(2001)1874.
20. Y-G. Xie, S. Kasai, H. Takahashi, C. Jiang and H. Hasegawa "A Novel InGaAs/InAlAs Insulated Gated Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC- and RF-Performance", IEEE Electron Device Lett. 22(2001)312.
21. C. Jiang, H. Fujikura and H. Hasegawa "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates", Physica E7(2000)902-906
發表中文論文：
1 并五苯薄膜場效應晶體管輸運性質與晶粒尺寸關聯和影響 胡袁源; 祁瓊; 江潮 國家納米科學中心; 中國科學院研究生院 【會議】全國第八屆有機固體電子過程暨華人有機光電功能材料學術討論會摘要集 2010-06-14
2 高性能有機薄膜晶體管(OTFT)制備及其導電機制 江潮; 于愛芳; 祁瓊 國家納米科學中心 【期刊】微納電子技術 2009-07-15
3 納米技術的應用(材料、器件、產品)與標準化 任紅軒; 江潮; 張宇 國家納米科學中心; 國家納米科學中心; 東南大學 【期刊】中國標準化 2007-09-05
4 納米檢測技術標準化簡介 江潮 國家納米科學中心 【期刊】中國標準化 2007-09-05
5 InAlAs/InGaAs/InP異質結構的X射線雙晶衍射研究 麥振洪; 王超英; 吳蘭生; 江潮; 周鈞銘 中國科學院物理研究所; 中國科學院物理研究所; 中國科學院物理研究所 北京 【期刊】中國科學(A輯 數學 物理學 天文學 技術科學) 1994-01-15
6 InGaAs/InAlAs/InP異質結結構的X射線雙晶衍射研究 王超英; 吳蘭生; 江潮; 麥振洪; 黃綺; 周鈞銘 中國科學院物理研究所; 中國科學院物理研究所; 中國科學院物理研究所 北京 【期刊】科學通報 1992-12-11
7 8—12μm GaAs量子阱紅外探測器及其線陣列 陳正豪; 周均銘; 崔大復; 胡強; 蔡麗紅;江潮; 呂惠賓; 黃綺; 楊國楨; 尹潔; 吳人齊; 周文娟; 徐元林; 鄭炳洪 中國科學院物理研究所; 中國科學院物理研究所; 華北光電技術研究所; 華北光電技術研究所 北京 【期刊】科學通報 1993-06-30
8 與In擴散進GaAs中相關的超導相的發現 李永康; 周均銘; 黃綺; 江潮; 梅笑冰; 范戇 中國科學院物理研究所; 中國科學院物理研究所 【期刊】物理 1992-09-27
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